Xerox Assigned Patent for Epoxysilane Hole Blocking Layer Photoconductors
ALEXANDRIA, Va., July 2012– Xerox, Norwalk, Conn., has been assigned a patent (8,227,155) developed by seven co-inventors for an "epoxysilane hole blocking layer photoconductors." The co-inventors are Jin Wu, Webster, N.Y., Sherri A. Toates, Webster, N.Y., J. Robinson Cowdery-Corvan, Webster, N.Y., Mark Muscato, Webster, N.Y., Richard A. Williams, Savannah, N.Y., Marc J. Livecchi, Rochester, N.Y., and Linda L. Ferrarese, Rochester, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoconductor that includes, for example, a substrate, an optional ground plane layer, an undercoat layer thereover, wherein the undercoat layer contains an aminosilane and an epoxysilane, a photogenerating layer, and at least one charge transport layer."
The patent application was filed on July 29, 2009 (12/511,128). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,227,155.PN.&OS=PN/8,227,155&RS=PN/8,227,155KS0728AK0728-765847